Skip to main content Accessibility help

Investigation of electric fields, interface charges, and conduction band offsets at ZnSe/GaAs heterojunctions with a novel photoreflectance technique

  • D. J. Dougherty (a1), S.B. Fleischer (a1), E. L. Warlick (a1), J. L. House (a1), G. S. Petrich (a1), E. Ho (a1), L. A. Kolodziejski (a1) and E. P. Ippen (a1)...


ZnSe/GaAs heterojunctions were investigated by contactless electroreflectance and photoreflectance techniques. Negative surface charge densities on the order of 1012 cm-2 were observed for films grown on n-type GaAs indicating a large contribution to the conduction band barrier between the materials due to band bending. The conduction band offset was also measured using a new photoreflectance technique involving a tunable pump laser.



Hide All
1 Yeganeh, M. S., Qi, J., Yodh, A. G. and Tamargo, M. C., Phys. Rev. Lett., 68, 3761(1992).
2 Bonnani, A., Vanzetti, L., Sorba, L., Franciosi, A., Lomascolo, M., Prete, P. and Cingolani, R., Appl. Phys. Lett., 66, 1092 (1995).
3 Rennie, J., Nishikawa, Y., Saito, S., Onomura, M. and Hatakoshi, G., Appl. Phys. Lett., 68, 2971 (1996).
4 Yin, X., Guo, X.,Pollak, F. H., Pettit, G. D., Woodall, J. M. and Cirlin, Eun-He, SPIE Proceedings, Vol. 1678, 168 (1992).
5 Yow, H. K., Houston, P. A. and Hopkinson, M., Appl. Phy. Lett., 66, 2852 (1995).
6 Pages, O., Renucci, M. A., Briot, O and Aulombard, R. L., J. Appl. Phys 80, 1128 (1996).
7 Ulbrich, R. G., Kash, J. A. and Tsang, J. C., Phys. Rev. Lett., 62, 949 (1989).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed