Skip to main content Accessibility help
×
Home

Investigation of electric fields, interface charges, and conduction band offsets at ZnSe/GaAs heterojunctions with a novel photoreflectance technique

  • D. J. Dougherty (a1), S.B. Fleischer (a1), E. L. Warlick (a1), J. L. House (a1), G. S. Petrich (a1), E. Ho (a1), L. A. Kolodziejski (a1) and E. P. Ippen (a1)...

Abstract

ZnSe/GaAs heterojunctions were investigated by contactless electroreflectance and photoreflectance techniques. Negative surface charge densities on the order of 1012 cm-2 were observed for films grown on n-type GaAs indicating a large contribution to the conduction band barrier between the materials due to band bending. The conduction band offset was also measured using a new photoreflectance technique involving a tunable pump laser.

Copyright

References

Hide All
1 Yeganeh, M. S., Qi, J., Yodh, A. G. and Tamargo, M. C., Phys. Rev. Lett., 68, 3761(1992).
2 Bonnani, A., Vanzetti, L., Sorba, L., Franciosi, A., Lomascolo, M., Prete, P. and Cingolani, R., Appl. Phys. Lett., 66, 1092 (1995).
3 Rennie, J., Nishikawa, Y., Saito, S., Onomura, M. and Hatakoshi, G., Appl. Phys. Lett., 68, 2971 (1996).
4 Yin, X., Guo, X.,Pollak, F. H., Pettit, G. D., Woodall, J. M. and Cirlin, Eun-He, SPIE Proceedings, Vol. 1678, 168 (1992).
5 Yow, H. K., Houston, P. A. and Hopkinson, M., Appl. Phy. Lett., 66, 2852 (1995).
6 Pages, O., Renucci, M. A., Briot, O and Aulombard, R. L., J. Appl. Phys 80, 1128 (1996).
7 Ulbrich, R. G., Kash, J. A. and Tsang, J. C., Phys. Rev. Lett., 62, 949 (1989).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed