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Investigation of Domain Wall Velocity and Nucleation Rate in Polarization Switching of Epitaxial Pb(Zr,Ti)O3 Thin Films Using Piezoresponse Scanning Force Microscopy

Published online by Cambridge University Press:  11 February 2011

H. Fujisawa ,
T. Yagi ,
M. Shimizu  and
H. Niu
H. Fujisawa
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan.
T. Yagi
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan.
M. Shimizu
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan.
H. Niu
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan.
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Abstract

Domain wall velocity and nucleation rate in 250nm-thick epitaxial Pb(Zr,Ti)O3 thin films were studied by piezoresponse scanning force microscopy (PFM). Domain growth observed after applying switching pulses shorter than the switching time can be described using the Ishibashi theory. At a pulse voltage of +5V, experimental results indicated that new nucleation occurred during the switching period, which corresponded to the Category I in the Ishibashi theory. Switching time, domain wall velocity and nucleation rate at +5V can be obtained as 70ns, 8.3m/s and 43μs-1 μm-2, respectively. As compared with experimental results reported in BaTiO3 single crystals, domain wall velocity was much smaller but nucleation rate was much larger than those in single crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U5.2
Copyright
Copyright © Materials Research Society 2003

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References

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