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Investigation of Aluminum Thin Films Using Electron Backscatter Diffraction and the New Technique of Orientation Imaging Microscopy

Published online by Cambridge University Press:  15 February 2011

D. J. Dingley  and
D. P. Field
D. J. Dingley
Affiliation:
On sabbatical from University of Bristol, Bristol BS81TL, United Kingdom
D. P. Field
Affiliation:
TexSEM Laboratories, Provo, Utah 84604
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Abstract

Aluminum thin films deposited onto silicon substrates coated with silicon dioxide or a layered structure of titanium and titanium nitride have been investigated using the combined techniques of electron backscatter diffraction and orientation imaging microscopy. By these methods the local texture and spatial distribution of texture components was established. It was observed that whereas the material exhibited an overall <111> texture with the in-plane direction <110> uniformly distributed, there were variations in the local texture and distribution of orientations with clustering of grains of similar orientation. Individual grains within the clusters were nearly perfect and varied in orientation by only a few degrees. The effective grain size differed greatly on whether the cluster size of similarly oriented grains or the diameter of individual grains within the cluster was considered to constitute the grain structure. No strong bias was found in favor of coincident site oriented grain pairs though in some cases the frequency of occurrence of low angle boundaries was less than is expected on a purely random basis. Additional experiments were carried out in order to establish the suitability of orientation imaging microscopy for microstructure characterization of interconnect lines in integrated semiconductor device technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 197
Copyright
Copyright © Materials Research Society 1996

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