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Investigation and Modeling of Fluorine Co-Implantation Effects on Dopant Redistribution

Published online by Cambridge University Press:  01 February 2011

M. Diebel ,
S. Chakravarthi ,
S.T. Dunham ,
C.F. Machala ,
S. Ekbote  and
A. Jain
M. Diebel
Affiliation:
Department of Physics, Univ. of Washington, Seattle, WA 98195-1560, USA Silicon Technology Development, Texas Instruments, Dallas, TX 75243, USA
S. Chakravarthi
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243, USA
S.T. Dunham
Affiliation:
Department of Electrical Engineering, Univ. of Washington, Seattle, WA 98195-2500, USA
C.F. Machala
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243, USA
S. Ekbote
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243, USA
A. Jain
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243, USA
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Abstract

A comprehensive model is developed from ab-initio calculations to understand the effects of co-implanted fluorine (F) on boron (B) and phosphorus (P) under sub-amorphizing and amorphizing conditions. The depth of the amorphous-crystalline interface and the implant depth of F are the key parameters to understand the interactions. Under sub-amorphizing conditions, B and P diffusion are enhanced, in contrast to amorphized regions where the model predicts retarded diffusion. This analysis predicts the F effect on B and P to be entirely due to interactions of F with point-defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D6.15
Copyright
Copyright © Materials Research Society 2003

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