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Inversion Domain Boundary Dislocations in Heteroepitaxial Films

Published online by Cambridge University Press:  26 February 2011

T. T. Cheng ,
P. Pirouz  and
F. Ernst
T. T. Cheng
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A.
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A.
F. Ernst
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A.
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Abstract

Transmission electron microscope (TEM) images of inversion domain boundaries (IDB) show fringe contrast, thus indicating a relative displacement between the two adjoining domains. When the IDBs are facetted, different facets may have different displacement fault vectors. This implies that when the facetting changes from one plane to another, there should be a dislocation at the intersection of the planes. This is termed an “inversion domain boundary dislocation” and it will have a Burgers vector b=R1–R2 where R1, and R2 are the fault vectors of the two facets. Experimental results for facetted IDBs and IDB dislocations in SiC grown heteroepitaxially on (001) silicon are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 189
Copyright
Copyright © Materials Research Society 1989

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References

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