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Intrinsic Surface Defects on 4H SiC Substrates

Published online by Cambridge University Press:  01 February 2011

Mary Ellen Zvanut ,
Sarah Thomas  and
Jamiyanaa Dashdorj
Mary Ellen Zvanut
Affiliation:
mezvanut@uab.edu, University of Alabama at Birmingham, Physics, Birmingham, Alabama, United States
Sarah Thomas
Affiliation:
saltom@uab.edu, University of Alabama at Birmingham, Physics, Birmingham, Alabama, United States
Jamiyanaa Dashdorj
Affiliation:
saltom@uab.edu, University of Alabama at Birmingham, Physics, Birmingham, Alabama, United States
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Abstract

We have investigated a point defect, common to all SiC substrates, that is thought to be a broken carbon bond. Electron paramagnetic resonance spectroscopy performed in combination with three different etching methods using p-type, n-type, and semi-insulating substrates demonstrate that the center lies near the surface of a wafer. The results suggest that on the order of 1013 cm-2 defects are removed within the first micron of the surface of a wafer.

Keywords

defectselectron spin resonanceannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B03-03
Copyright
Copyright © Materials Research Society 2010

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