Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-17T12:48:54.792Z Has data issue: false hasContentIssue false
  • English
  • Français

Intrinsic Surface Defects on 4H SiC Substrates

Published online by Cambridge University Press:  01 February 2011

Mary Ellen Zvanut ,
Sarah Thomas  and
Jamiyanaa Dashdorj
Mary Ellen Zvanut
Affiliation:
mezvanut@uab.edu, University of Alabama at Birmingham, Physics, Birmingham, Alabama, United States
Sarah Thomas
Affiliation:
saltom@uab.edu, University of Alabama at Birmingham, Physics, Birmingham, Alabama, United States
Jamiyanaa Dashdorj
Affiliation:
saltom@uab.edu, University of Alabama at Birmingham, Physics, Birmingham, Alabama, United States
Get access

Abstract

We have investigated a point defect, common to all SiC substrates, that is thought to be a broken carbon bond. Electron paramagnetic resonance spectroscopy performed in combination with three different etching methods using p-type, n-type, and semi-insulating substrates demonstrate that the center lies near the surface of a wafer. The results suggest that on the order of 1013 cm-2 defects are removed within the first micron of the surface of a wafer.

Keywords

defectselectron spin resonanceannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B03-03
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Uren, M.J. and Kuball, M., Mat. Sci. Forum 556–557, 1017 (2007).Google Scholar
2 Eddy, C.R. Jr, Bassim, N.D., Mastro, M.A., et. al., Mat. Sci. Forum 527–529, 1483 (2006).Google Scholar
3 Forte-Poisson, M.A. di, Magis, M., Sarazin, N., Tordjman, M., and di, J. Persio, Phys. Stat. Sol. (a) 203, 185 (2006).Google Scholar
4 Brodsky, M.H. and Title, R.S., Phys. Rev. Lett. 23, 581 (1969).Google Scholar
5 Ishii, N., Kumeda, M. and Shimizu, T., Solid State Comm. 41, 143 (1982).Google Scholar
6 Cochrane, C.J., Lenahan, P.M. and Lelis, A.J., Appl. Phys. Lett. 90, 123501 (2007).Google Scholar
7 Poindexter, E.H. and Caplan, P.J., J. Appl. Phys. 52, 679 (1981).Google Scholar
8 Macfarlane, P.J. and Zvanut, M.E., J. Appl. Phys. 88, 4122 (2000).Google Scholar
9 Ray, E.A., Rozen, J., Dhar, S., Feldman, L.C., and Williams, J.R., J. Appl. Phys. 103, 23522 (2008).Google Scholar
10 MacFarlane, P.J., Ph.D. Dissertation, University of Alabama at Birmingham, 2000.Google Scholar
11 Zvanut, M.E., J. Phys.: Condens. Matter 16, R1341–R1367 (2004).Google Scholar
12 Weil, J.A., Bolton, J.R., and Wertz, J.E., “Electron Paramagnetic Resonance”, John Wiley & Sons, Inc, N.Y., 1994.Google Scholar
13 Son, N.T., Carlsson, P., Hassan, J. ul, Magnusson, B., and Janzen, E., Phys. Rev. B 75 155204 (2007).Google Scholar