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Intrinsic Stress in a-Germanium Films Deposited by RF-Magnetron Sputtering

  • D. Fahnline (a1), B. Yang (a1), K. Vedam (a1), R. Messier (a1) and L. Pilione (a1)...

Abstract

Thin a-Ge films deposited by rf-magnetron sputtering undergo a change from compressive to tensile stress as the argon gas pressure is increased. Spectroscopic ellipsometry, neutron activation analysis, and a dual laser beam reflection technique were used to determine the film's void fraction content, Ar/Ge atomic percent, and stress, respectively. The results of these three measurements indicate that as the film's Ar/Ge content increases, the void fraction decreases and the intrinsic stress becomes compressive. These findings are consistent with currently accepted bombardment mechanisms.

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Intrinsic Stress in a-Germanium Films Deposited by RF-Magnetron Sputtering

  • D. Fahnline (a1), B. Yang (a1), K. Vedam (a1), R. Messier (a1) and L. Pilione (a1)...

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