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Intrinsic Gettering of Iron in Czochralski Silicon Crystals

Published online by Cambridge University Press:  03 September 2012

M. Aoki ,
A. Hara  and
A. Ohsawa
M. Aoki
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
A. Hara
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
A. Ohsawa
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
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Abstract

We present a new experimental approach to studying the mechanism of intrinsic gettering of Fe in Czochralski silicon crystals. We present our experimental method and results for as-grown and intrinsic gettered wafers with high and low-level Fe surface contamination. We found that when annealing at the Fe supersaturation temperature, Fe concentration decreases faster in intrinsic gettered wafers than in as-grown wafers. Concentration saturated with annealing time for each sample and the saturated Fe concentration followed a simple Arrhenius relationship. Re-emission of Fe from the bulk defect region occurred above the gettering temperature. We conclude that in intrinsic gettering, Fe precipitates preferentially in the bulk defect region when the Fe impurities supersaturate as temperature drops.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 963
Copyright
Copyright © Materials Research Society 1992

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References

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