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Intrasubband 1.55 μm Electrooptical Modulation in SiGe Asymmetric Quantum Well Structures

  • Lionel R. Friedman (a1) and Richard A. Soref (a2)

Abstract

A new, fast, intrasubband 1.55 μm electrooptic modulator in the SiGe/Si/CaF2-on-Si steppedquantum- well system is proposed and analyzed. At electric fields of ±8 V/μm, resonant 1-3 conduction intrasubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions. We expect this field effect modulator to have microwave response, plus compatibility with Si-based optoelectronic integration.

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