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Intrasubband 1.55 μm Electrooptical Modulation in SiGe Asymmetric Quantum Well Structures

Published online by Cambridge University Press:  25 February 2011

Lionel R. Friedman  and
Richard A. Soref
Lionel R. Friedman
Affiliation:
National Science Research Council, Senior Fellow
Richard A. Soref
Affiliation:
USAF Rome Laboratory, RL/EROC, Hanscom Air Force Base, MA 01731
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Abstract

A new, fast, intrasubband 1.55 μm electrooptic modulator in the SiGe/Si/CaF2-on-Si steppedquantum- well system is proposed and analyzed. At electric fields of ±8 V/μm, resonant 1-3 conduction intrasubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions. We expect this field effect modulator to have microwave response, plus compatibility with Si-based optoelectronic integration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 63
Copyright
Copyright © Materials Research Society 1993

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