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Intra-Granular Microstructure And Stress In Sputtered Tungsten Thin Films

Published online by Cambridge University Press:  15 February 2011

M.F. Ravet
Affiliation:
Laboratoire de Microstructures et Microélectronique, CNRS, 196 Av. H. Ravera, 92225
K.F. Badawi
Affiliation:
Laboratoire de Métallurgie Physique, CNRS, 40, Avenue du Recteur Pineau, 86022 Poitiers, France
N. Durand
Affiliation:
Laboratoire de Métallurgie Physique, CNRS, 40, Avenue du Recteur Pineau, 86022 Poitiers, France
H. Lafontaine
Affiliation:
Laboratoire de Microstructures et Microélectronique, CNRS, 196 Av. H. Ravera, 92225 Permanent address: INRS Energie Matériaux, 1650 Monté Sainte Julie, Varennes, Canada
V. Barnole
Affiliation:
France-Telecom CNET, 196 Av. Henri Ravera, 92225 Bagneux, France
A.M. Haghiri-Gosnet
Affiliation:
Laboratoire de Microstructures et Microélectronique, CNRS, 196 Av. H. Ravera, 92225
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Abstract

Intra-granular microstructure and stress of tungsten rf magnetron sputtered thin films have been correlated for deposits with stresses ranging from 1000 MPa to −1000 MPa and belonging to the zone T of the Thornton's microstructural diagram. For pure α-W films, the stress values determined from the substrate deflection method were shown to be comparable with those determined by the x-ray diffraction sin2ψ method using the α-W (321) reflection. The lattice parameter a0 of the unstressed material as deduced and was found to depend on the deposition conditions. In addition, a significant broadening of the (321) diffraction peak was observed foi compressive films, which suggests that the intra-granular microstructure has been changed. These original results are interpreted in terms of structural defects: in particular, compressive stress can be related to an interstitial feature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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