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Intersubband Transitions, Infrared Detectors, and Optical Nonlinearities in SiGe Multiquantum Wells

Published online by Cambridge University Press:  10 February 2011

M. Helm ,
P. Kruck ,
T. Fromherz ,
M. Seto ,
G. Bauer ,
J. F. Nützel  and
G. Abstreiter
M. Helm
Affiliation:
Institut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
P. Kruck
Affiliation:
Institut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
T. Fromherz
Affiliation:
Institut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
M. Seto
Affiliation:
Institut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
G. Bauer
Affiliation:
Institut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
J. F. Nützel
Affiliation:
Walter Schottky Institut, TU München, D-85748 Garching, Germany
G. Abstreiter
Affiliation:
Institut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
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Abstract

A survey is given about the potential use of Si/SiGe heterostructures for applications in the mid-infrared spectral range. We discuss theoretical foundations and experiments of intersubband absorption in p-type Si/SiGe quantum wells and show that due to the complex valence-band structure, normal-incidence absorption can be observed. On the basis of these quantum wells, mid-infrared detectors were fabricated and characterized in terms of responsivity, dark current and detectivity. In asymmetric, compositionally stepped quantum wells second harmonic generation of CO2 laser radiation has been demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 201
Copyright
Copyright © Materials Research Society 1997

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References

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