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Intersubband Transitions in GaN/AlxGa1-xN Multi Quantum Wells

Published online by Cambridge University Press:  26 February 2011

E. A. DeCuir Jr ,
Y. C. Chua ,
B. S. Passmore ,
J. Liang ,
M. O. Manasreh ,
J. Xie ,
H. Morkoc ,
A. Asghar ,
I. T. Ferguson  and
A. Payne
E. A. DeCuir Jr
Affiliation:
University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, USA
Y. C. Chua
Affiliation:
University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, USA
B. S. Passmore
Affiliation:
University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, USA
J. Liang
Affiliation:
University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, USA
M. O. Manasreh
Affiliation:
University of Arkansas, Department of Electrical Engineering, Fayetteville, AR 72701, USA
J. Xie
Affiliation:
Virginia Commonwealth University, Department of Electrical Engineering and Physics Department, Richmond, VA 23284, USA
H. Morkoc
Affiliation:
Virginia Commonwealth University, Department of Electrical Engineering and Physics Department, Richmond, VA 23284, USA
A. Asghar
Affiliation:
Georgia Institute of Technology, Department of Electrical Engineering, Atlanta, GA 30332, USA
I. T. Ferguson
Affiliation:
Georgia Institute of Technology, Department of Electrical Engineering, Atlanta, GA 30332, USA
A. Payne
Affiliation:
Georgia Institute of Technology, Department of Electrical Engineering, Atlanta, GA 30332, USA
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Abstract

Intersubband transitions (ISTs) in GaN/AlxGa1-xN multiple quantum wells (MQWs) were investigated using an optical absorption technique. Several samples were grown by either Molecular Beam Epitaxy (MBE) or Metal-Organic Chemical Vapor Deposition (MOCVD) and were investigated using both normal incident and waveguide configurations. The waveguides were fabricated by dicing each sample into 2 mm wide by 5 mm long pieces with two facets polished at 45 degrees with respect to the surface such that light propagates across the sample's width. Preliminary results indicate that ISTs are observable in Si-doped and undoped GaN/AlxGa1-xN MQWs. The source of these charge carriers in the undoped samples are explained as being due to the spontaneous polarization effect which exists at the GaN/AlxGa1-xN interfaces where the GaN surface has Ga-polarity. Scanning Electron Microscopy indicates that a sample containing what appeared to be a large number of cracks and or hexagonal voids lacked the presence of ISTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.29
Copyright
Copyright © Materials Research Society 2005

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References

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