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Internal Gettering in Czochralski Silicon

Published online by Cambridge University Press:  21 February 2011

Robert A. Craven
Robert A. Craven*
Affiliation:
Monsanto Electronic Materials Company 800 North Lindbergh Blvd. St. Louis, Missouri 63167
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Abstract

A review of the use of oxygen precipitation for the purposes of internal gettering in silicon is given. The review considers current ideas about oxygen precipitation mechanisms and the relationships between different precipitate morphologies. Two different paths for oxygen precipitation are considered, the first path being 450C thermal donor - coesite defects and the second being <100> oriented platelets. A summary of the uses of oxygen precipitation gettering in integrated circuit fabrication and a simple model for optimization of internal gettering follows the precipitation discussion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 159
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. “Semiconductor Silicon 1977”, eds. Huff, H. R.and Sirtl, E. (Electrochemical Soc., Princeton, 1977)Google Scholar
2. “Semiconductor Silicon 1981”, eds. Huff, H. R., Kriegler, R. J., and Takeishi, Y. (Electrochemical Soc., Princeton, 1977.)Google Scholar
3. “Defects in Semiconductors II”, eds. Mahajan, S.and Corbett, J. W. (North-Holland, New York, 1983)Google Scholar
4. “Defects in Silicon”, eds. Bullis, W. M.and Kimerling, L. C. (Electrochemical Soc., Princeton, 1983)Google Scholar
5. “VLSI Science and Technology”, eds. Bean, K. E.and Rozgonyi, G. A. (Electrochemical Soc., Princeton, 1984)Google Scholar
6. Patel, J. R. in Ref. 1 521, in Ref. 2, 189.Google Scholar
7. Abe, T., Kikuchi, K., Shirai, S. and Muraoka, S. in Ref. 2, 54.Google Scholar
8. Abe, T., Harada, H., and Chikawa, J., in Ref. 3, 1.Google Scholar
9. Fuller, C. S., Ditzenberger, N. B., Hannay, N.B., Buehler, E., Phys. Rev. 96, 833 (1954).Google Scholar
10. Kaiser, W., Phys. Rev. 105, 1751 (1957).10.1103/PhysRev.105.1751CrossRefGoogle Scholar
11. Logan, R. A., J. Appl. Phys. 28, 819 (1957).10.1063/1.1722863Google Scholar
12. Fuller, C. S. and Logan, R. A., J. Appl. Phys. 28, 1427 (1957).10.1063/1.1722672Google Scholar
13. Fuller, C. S. and Doleiden, F. H., J. Appl. Phys. 29, 1254 (1958)10.1063/1.1723420Google Scholar
14. Kanamori, A., Appl. Phys. Lett. 34, 287 (1979), and A. Kanamori and M. Kanamori, J. Appl. Phys. 50, 8095 (1979).10.1063/1.90762Google Scholar
15. Oehrlein, G. S., Lindstrom, J. L. and Cohen, S. A., J. Electronic Materials, Dec. 1984. to be published.Google Scholar
16. Cazcarra, V., Zunino, P., J. Appl. Phys. 51, 4206 (1980).10.1063/1.328278Google Scholar
17. Gatos, H. C. and Lagowski, J., in Ref. 5, 1.Google Scholar
18. Oder, R. and Wagner, P., in Ref. 3, 171.Google Scholar
19. Schaake, H. F., Baber, S. C. and Pinizzotto, R. F. in Ref. 2, 273.Google Scholar
20. Muller, S. H., Sprenger, M., Sieverts, E. G. and Ammerlaan, C. A. J., Solid State Commun. 25, 987 (1978).10.1016/0038-1098(78)90889-XGoogle Scholar
21. Benton, J. L., Lee, K. M., and Kimerling, L. C., J. Electronic Materials Dec. 1984 (to be published), and Proc. 13th International Conf. on Defects in Semiconductors, Aug. 12–17, Coronodo, Ca.Google Scholar
22. Farmer, J. W., Meese, J. M., Henry, P. M., and C. D. Lamp in Ref. 20.Google Scholar
23. Farmer, J. W., Meese, J. M., and Henry, P. M., Appl. Phys. Lett. to be published.Google Scholar
24. Oehrlein, G. and Corbett, J. W., in Ref. 3, 107.Google Scholar
25. Ourmazd, A., Schroter, W. and Bourret, A., J. Appl. Phys 56, 1670 (1984).10.1063/1.334156Google Scholar
26. Hahn, S., Hung, D., Shathas, S. and Rek, S. in Ref 5, 85.Google Scholar
27. Baiardo, J., Shive, L., and Kirk, S., private communication.Google Scholar
28. Bourret, A., Thibault-Desseaux, J., and Seidman, D. N., J. Appl. Phys. 55, 825 (1984).10.1063/1.333178Google Scholar
29. Craven, R. A., Proceedings International Electronics Device Meeting 1981 (IEEE pub.) 228.Google Scholar
30. Shaw, R. W. and Craven, R. A. in Ref. 4, 76.Google Scholar
31. Peaker, A. R., Craven, R. A. and Shaw, R. W., Electrochemical Soc. Extended Abstracts, 83–2, 530.Google Scholar
32. Schmalz, K., Gaworzewski, P. and Kirscht, F. G., Phys. Stat. Sol. (a), 81, K165 (1984)10.1002/pssa.2210810256Google Scholar
33. Bourret, A.. Preprint see Ref 21.Google Scholar
34. Fraundorf, G. K., Fraundorf, P. B., Craven, R. A., Frederick, R., Moody, J., and Shaw, R., J. Electrochem. Soc. (in press).Google Scholar
35. Shimura, F., Tsuya, H. and Kawamura, T, J. Appl. Phys 51, 269 (1980)10.1063/1.327419Google Scholar
36. Fraundorf, P. B., Fraundorf, G. K., and Craven, R. A., to be published.Google Scholar
37. Tsai, H. L., Carpenter, R. W., and Peng, J. D., Proceedings of the 42nd Annual Meeting of the Electron Microscopy Society of America, ed. G. W. Bailey, (San Francisco Press, San Francisco, 1984) p. 344.Google Scholar
38. Tan, T. Y., Gardner, E. E. and Tice, W. K., Appl. Phys. Lett.,30 175 (1977).10.1063/1.89340Google Scholar
39. Tice, W. K. and Tan, T. Y., Defects in Semiconductors, eds. Narayan, J.and Tan, T. Y. (North-Holland, New York, 1981) 367.Google Scholar
40. Shimura, F., J. Crystal Growth 54, 588 (1981).10.1016/0022-0248(81)90518-2CrossRefGoogle Scholar
41. Pearce, C. W. and Rozgonyi, G. A., Semiconductor Charaterization Techniques (Electrochem. Soc., Princeton, 1978) 314.Google Scholar
42. Shimura, F. and Tsuya, H., J. Electrochemical Soc. 129, 2084 (1982)Google Scholar
43. Craven, R. A. and Fraundorf, G. K., Electrochem. Soc. Extended Abs. 83–2, 484.Google Scholar
44. Tsuya, H., Kondo, Y. and Kanamori, M., Jap. J. Appl. Phys. 22, L16 (1983).10.1143/JJAP.22.L16Google Scholar
45. DeKock, A. J. R. and Van der Wijgert, W. M., J. Crystal Growth 49, 718 (1980).10.1016/0022-0248(80)90299-7Google Scholar
46. Shimura, F., Dyson, W., Moody, J. and Hockett, R. S., to be published VLSI Science and Technology (Electochemical Society, Princeton, 1985)Google Scholar
47. Dyson, W., O'Grady, S. Rossi, J. A., Hellwig, L.G., and Moody, J. W., in Ref 5, 107.Google Scholar
48. Pearce, C. W., Kook, T., and Jaccodine, R. J., (This proceedings).Google Scholar
49. Keefe-Fraundorf, G. and R. A. Craven in Ref 4, 406.Google Scholar
50. Stacy, W. T., Arst, M. C., Ritz, K. N. de Groot, J. G. and Norcott, M. H., in Ref 4, 423.Google Scholar
51. Hill, D. E. in Ref. 2, 354.Google Scholar
52. Stacy, W. T., Allison, D. F. and Wu, T. C., in Ref. 2, 344.Google Scholar
53. Sze, S. M., Physics of Semiconductor Devices 2nd Ed., (John Wiley and Sons, New York) 1981.Google Scholar
54. Chaterjee, P. K., Taylor, G. W., Tasch, A. F. jr., Fu, Horng-Sen, IEEE Trans. Elec. Dev., 26, 564 (1979).10.1109/T-ED.1979.19461Google Scholar
55. Varker, C. J., Whitfield, J. D., Rao, K. V. and Demer, L. J., in Ref. 2, 313.Google Scholar
56. Varker, C. J., Whitfield, J. D. and Fejes, P. L. in Ref. 3, 187.Google Scholar
57. Craven, R. A., in Ref. 2, 254.Google Scholar
58. Freeland, P. E., Jackson, K. A., Lowe, C. W. and Patel, J. R., Appl. Phys. Lett. 30, 31 (1977).10.1063/1.89200Google Scholar
59. Inoue, N., Wada, K. and Osaka, J., in Ref. 2, 282.Google Scholar
60. Shimura, F., VLSI Science and Technology (Electrochem. Soc. 1982, Princeton) 17.Google Scholar
61. Mickelson, J., Appl. Phys. Lett. 40, 336 (1982).10.1063/1.93089CrossRefGoogle Scholar
62. Wang, P., Chang, L., Demer, L. J. and Varker, C. J., J. Electrochem. Soc., 131, 1948 (1984).10.1149/1.2115998Google Scholar
63. Rogers, B., Fair, R. B., Dyson, W., and Rozgonyi, G. A., in Ref. 5, 74.Google Scholar
64. Nichols, D. N., in Ref. 4, 214.Google Scholar
65. Takasu, S., in Ref. 5, 490.Google Scholar
66. Leroy, B. and Plougonven, C., J. Electrochem. Soc. 127, 961 (1980)10.1149/1.2129796Google Scholar