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Internal Electric Field in Light-Degraded p-i-n a-Si:H Solar Cells

Published online by Cambridge University Press:  01 January 1993

Franc Smole ,
JoŽe Furlan  and
Marko TopiČ
Franc Smole
Affiliation:
Faculty of Electrical and Computer Engineering, University of Ljubljana, TržaŠka c. 25, Ljubljana, Slovenia
JoŽe Furlan
Affiliation:
Faculty of Electrical and Computer Engineering, University of Ljubljana, TržaŠka c. 25, Ljubljana, Slovenia
Marko TopiČ
Affiliation:
Faculty of Electrical and Computer Engineering, University of Ljubljana, TržaŠka c. 25, Ljubljana, Slovenia
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Abstract

Based on results of a-Si:H solar cell computer simulation solving numerically the Poisson, transport and continuity equations, using a rather complex density of states distribution being in agreement with experimental observations, shows that light-soaking degradation can be attributed to both, light induced effects in heterojunction region and to changes in the i-layer, which together tend to reduce the built-in electric field inside of the i-region. Measurements of spectral sensitivity using small intensity monochromatic illumination in combination with an accurate computer analysis provides the possibility of ascertaining which of the degrading effects is the dominating one in a particular a-Si:H solar cell structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 631
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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