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Intermetallic Formation in PZT for MEMS Structures

Published online by Cambridge University Press:  09 August 2012

Kanu priya Sharma ,
Thomas Oseroff  and
Leda Lunardi
Kanu priya Sharma
Affiliation:
Dep. of Electrical and Computer Engineering, NC State University, Raleigh, NC-27695, U.S.A
Thomas Oseroff
Affiliation:
Dep. of Electrical and Computer Engineering, NC State University, Raleigh, NC-27695, U.S.A
Leda Lunardi
Affiliation:
Dep. of Electrical and Computer Engineering, NC State University, Raleigh, NC-27695, U.S.A
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Abstract

Crack free lead zirconate titanate (PZT) films for piezoelectric based MEMS devices have been prepared by a multiple coating sol gel process on platinized silicon (100) substrates. Rapid thermal annealing and Conventional furnace annealing were used for densification and crystallization of the amorphous PZT films. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM) and Atomic force microscopy (AFM) were used to observe surface film morphology and grain growth. The phase content of the films was analyzed using X-ray diffraction. The role of intermetallics formed during the heat treatment in the growth of different orientations has also been observed. Film aging critical for device performance has been observed and methods to revert aging effects have been examined and discussed.

Keywords

sol-gelmicroelectro-mechanical (MEMS)piezoelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1427: Symposium B – Heterogeneous Integration Challenges of MEMS, Sensor and CMOS LSI , 2012 , mrss12-1427-b07-21
Copyright
Copyright © Materials Research Society 2012

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References

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