Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-30T01:48:04.608Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Structures of Nickel Silicides in the SiaNi/Sic System

Published online by Cambridge University Press:  03 September 2012

Bae-Heng Tseng ,
Chia-Dar Hsieh  and
Show-Gin Wu
Bae-Heng Tseng
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C
Chia-Dar Hsieh
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C
Show-Gin Wu
Affiliation:
Department of Physics, National Tsing Hua University, Hsin-Chu, Taiwan, R.OC
Get access

Abstract

A laterally uniform formation of NiSi2 at low temperature had been reported for the SiaNi/Sic system. In this work, the interfacial structure of NiSi2 is studied by the high-resolution electron microscopy. We observe an amorphous layer (5–10 nm in thickness) between Sic and NiSi2 in a Sia(300nm)/Ni(5Onm)/Sic sample after annealing at 450°C. The NiSi2 phase in this sample has a polycrystalline structure. We also find that a contaminated amorphous-Si film can not promote a reaction with Ni. A SIMS depth profile shows that this amorphous-Si layer is high in oxygen and carbon. In this case, the silicide formation is similar to the Ni/Sic system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 261
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tu, K.N., Alessandrini, E.I., Chu, W.K., Kvautle, H. and Mayer, J.W., J. Appi. Phys., Suppl. 2, 669 (1974)CrossRefGoogle Scholar
2. Foll, H., Ho, P. S. and Tu, K.N., Phil. Mag., A45, 31 (1982)CrossRefGoogle Scholar
3. Pretorius, R., Harris, J.M., Turnbull, D., Poate, J.M. and Jacobson, D.C., Appl. Phys. Lett., 42, 698 (1983)Google Scholar
4. Cherns, D., Hetherington, C.J.D. and Humphreys, C.J., Phil. Mag., A49, 165 (1984).CrossRefGoogle Scholar
5. Lien, C.D., Nicolet, M.-A. and Lau, S.S., Phys. Stat. Sol., (a) 81, 123 (1984).CrossRefGoogle Scholar
6. Fan, J. C. C. and Anderson, H., J. Appi. Phys., 5, 4003 (1981)CrossRefGoogle Scholar
7. Kennedy, E.F., Csepregi, L., Mayer, J.W. and Sigman, T.W., J Appl. Phys., 48, 4242 (1977)CrossRefGoogle Scholar