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Interfacial Reactions of the Pt/Ti/Si Structures

Published online by Cambridge University Press:  25 February 2011

Bae-Heng Tseng ,
Chong-Kuang Lee  and
Ming-Feng Tseng
Bae-Heng Tseng
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
Chong-Kuang Lee
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
Ming-Feng Tseng
Affiliation:
Hoitek Microelectronics Inc., Hsinchu, Taiwan, R.O.C.
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Abstract

A 15rm-thick Ti-layer incorporated between Pt and Si was found to be effective in improving the structures of PtSi/Si interface. The roles of Ti-layer were to react with native oxides on the Si substrate and to form Ti-O solid solutions instead of Ti oxides which act as diffusion barrier and inhibit the reactions between Pt and Si. Auger depth profiling gave evidence that Ti and O moved outward as platinum suicides were formed. A smooth PtSi/Si interface was revealed by the transmission electron microscope.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 685
Copyright
Copyright © Materials Research Society 1992

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References

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