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Interfacial Atomic Structure in Heteroepitaxial β-SiC on TiC Substrates

  • Fen-Ren Chien (a1), S. R. Nutt (a1), J. Carulli (a2), N. Buchan (a2), W. S. Yoo (a2) and P. M. Mailloux (a2)...

Abstract

Thin epitaxial films of β-SiC were grown on (100), (111) and (112) TiC substrates and the interfaces were characterized by HREM. The (111) interface was abrupt and atomically flat, while the (112) interface was composed of {111} facets and steps. The (100) orientation did not result in epitaxial growth of SiC, a phenomenon attributed to the poor match of atomic positions in SiC and TiC on the (100) plane, although the lattice parameters are relatively close. A model for the atomic structure of the stable (111) interface is proposed based on comparison with HREM images of the interfaces.

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Interfacial Atomic Structure in Heteroepitaxial β-SiC on TiC Substrates

  • Fen-Ren Chien (a1), S. R. Nutt (a1), J. Carulli (a2), N. Buchan (a2), W. S. Yoo (a2) and P. M. Mailloux (a2)...

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