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Interface Velocity and Noble Metal Segregation During Ion Beam Induced Epitaxial Crystallization

Published online by Cambridge University Press:  25 February 2011

J. S. Custer ,
Michael O. Thompson ,
D. C. Jacobson  and
J. M. Poate
J. S. Custer
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The interface velocity of Au and Ag doped amorphous Si during ion beam induced epitaxy was measured using in situ time resolved reflectivity. Interfacial segregation coefficients were determined as a function of composition from numerical simulations. At 320°C Au impurities enhanced the velocity by up to a factor of 2.5 compared to the intrinsic case. Silver slightly retarded re-growth by 10 %. These effects are qualitatively similar to the case of thermal solid phase epitaxy. Using the measured impurity profiles and interface velocity, computer simulations relate the segregation coefficient to the concentrations of the impurity at the interface. In both cases, the segregation coefficient increases with increasing interfacial impurity concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 113
Copyright
Copyright © Materials Research Society 1990

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References

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