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The Interface Structure of Grain Boundaries in Polysilicont

  • S. M. Johnson (a1), K. C. Yoo (a2), R.G. Rosemeier (a3), P. Soltani (a3) and H. C. Lin (a2)...

Abstract

Normal grain growth in polysilicon material proceeds by a twinning mechanism such that the individual grain orientations are related by single or multiple twinning steps. The twinning relationship between adjacent grains can result in the alignment of their boundary interfaces along certain planar segments which have a very low electrical activity. The varying degree of electrical activity of these boundaries, and boundary positions, is attributed to the smaller dislocation portion of the larger change in orientation across the grains.

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Work supported by Semix, Incorporated under DOE Cooperative Agreement No. DE–FCO–80 ET 23197.

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1. Armstrong, R. W., Taylor, M. E., Storti, G. M. and Johnson, S. M., Proc. 14th IEEE Photovoltaic Specialists Conf., 196, (1980).
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The Interface Structure of Grain Boundaries in Polysilicont

  • S. M. Johnson (a1), K. C. Yoo (a2), R.G. Rosemeier (a3), P. Soltani (a3) and H. C. Lin (a2)...

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