Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-20T03:46:16.446Z Has data issue: false hasContentIssue false
  • English
  • Français

Interface Roughness in Strained Si/SiGe Multilayers

Published online by Cambridge University Press:  03 September 2012

A. A. Darhuber ,
V. Holy ,
J. Stangl ,
G. Bauer ,
J. NÜtzel  and
G. Abstreiter
A. A. Darhuber
Affiliation:
1Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
V. Holy
Affiliation:
1Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
J. Stangl
Affiliation:
1Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
G. Bauer
Affiliation:
1Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
J. NÜtzel
Affiliation:
2Walter Schottky Institut, TU München, Am Coulombwall 2, D-85748 Garching, Germany
G. Abstreiter
Affiliation:
2Walter Schottky Institut, TU München, Am Coulombwall 2, D-85748 Garching, Germany
Get access

Abstract

Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(OOl) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA), we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 153
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Xie, Y. H., Monroe, D., Fitzgerald, E., Silverman, P. J., Thiel, F. A., Watson, G. P., Appl. Phys. Lett. 63, 2263 (1993).Google Scholar
2 Bolognesi, C. R., Kroemer, H., English, J. H., Appl. Phys. Lett. 61, 213 (1992).Google Scholar
3 Headrick, R. L., Baribeau, J.-M., Phys. Rev. B 48, 9174 (1993).Google Scholar
4 Headrick, R. L., Baribeau, J.-M., J. Vac. Sci. Technol. B 11, 1514 (1993).Google Scholar
5 Phang, Y. H., Teichert, C., Lagally, M. G., Peticolas, L. J., Bean, J. C., Kasper, E., Phys. Rev. B 50, 14435 (1994).Google Scholar
6 Headrick, R. L., Baribeau, J.-M., Strausser, Y. E., Appl. Phys. Let. 66, 96 (1995).Google Scholar
7 Sinha, S. K., Sirota, E. B., Garoff, S., Stanley, H. B., Phys. Rev. B 38, 2297 (1988).Google Scholar
8 Holy, V., Baumbach, T., Phys. Rev. B 51, 10668 (1994).Google Scholar
9 de Boer, D. K. G., Phys. Rev. B 51, 5297 (1995).Google Scholar
10 Lent, C. S., Cohen, P. I., Surf. Sci. 121, 121 (1984) and Surf. Sci. 161, 39 (1985).Google Scholar
11 Spiller, E., Steams, D., and Krumrey, M., J. Appl. Phys. 74, 107 (1993).Google Scholar
12 Kaganer, V. M., Stepanov, S. A., Kôhler, R., Phys. Rev. B 52, 16369 (1995).Google Scholar
13 Ming, Z. H., Krol, A., Soo, Y. L., Kao, Y. H., Park, J. S., Wang, K. L., Phys. Rev. B 47, 16373 (1993).Google Scholar
14 Salditt, T., Metzger, T. H., Peisl, J., Phys. Rev. Lett. 73, 2228 (1994).Google Scholar
15 Holy, V. et al. , to be publishedGoogle Scholar