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Interface Quality and Interdiffusion in Si-Ge Heterostructures

Published online by Cambridge University Press:  15 February 2011

J.-M. Baribeau ,
D. J. Lockwood ,
G. C. Aers  and
M. W. C. Dharma-Wardana
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA.
D. J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA.
G. C. Aers
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA.
M. W. C. Dharma-Wardana
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA.
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Abstract

The evolution of interfaces of short-period (SimGen)p superlattices upon annealing has been studied by x-ray reflectometry and Raman scattering spectroscopy. Isothermal annealing treatments at 700° C resulted in a significant material redistribution as evidenced by a strong decay of the superlattice x-ray satellites and by the decay of longitudinal acoustic modes and changes in the optical mode intensity ratios in Raman scattering. Interdiffusion was more pronounced in superlattices of short periodicity. This may possibly be explained by the strong composition dependence of the diffusivity of Ge atoms in Sil-xGex alloys and the degree of preexisting interfacial mixing. This composition dependence of the diffusion may favor atomic displacement parallel to the interfaces leading to an initial smoothing of the interfaces

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 145
Copyright
Copyright © Materials Research Society 1993

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References

1. Houghton, D.C., Lockwood, D.J., Dharma-wardana, M.W.C., Fenton, E.W., Baribeau, J.-M. and Denhoff, M.W., J. Cryst. Growth 81, 343 (1987).Google Scholar
2. Baribeau, J.-M., Lockwood, D.J., Dharma-wardane, M.W.C., Rowell, N.L. and McCaffrey, J.P., Thin Solid Films 183, 17 (1989).Google Scholar
3. Chang, S. J., Wang, K.L., Bowman, R.C. and Adams, P.M., Appl. Phys. Lett. 54, 1253 (1989).Google Scholar
4. Baribeau, J.-M., Pascual, R. and Saimoto, S., Appl. Phys. Lett. 57, 1502 (1990).Google Scholar
5. Prokes, S.M. and Wang, K.L., Appl. Phys. Lett. 56, 2628 (1990).Google Scholar
6. Greer, A.L. and Spaepen, F., in Synthetic Modulated Structures, Edited by Chang, L.L. and Giessen, B.C. (Academic, Orlando, 1985), p. 419.CrossRefGoogle Scholar
7. McVay, G.L. and DuCharme, A. R., Phys. Rev. B 9, 627 (1974).CrossRefGoogle Scholar
8. Schorer, R., Friess, E., Eberl, K. and Abstreiter, G., Phys. Rev. B 44, 1772 (1991) and references therein.Google Scholar
9. Baribeau, J.-M., D, J. Phys.; Baribeau, J.-M., Lockwood, D.J. and Zhang, P.X., Appl. Surf. Sci., in press.Google Scholar
10. Hollander, B., Butz, R. and Mantl, S., Phys. Rev. B 46, 6975 (1992).Google Scholar
11. Jackman, T.E., Baribeau, J.-M., Lockwood, D.J., Aebi, P., Tyliszczak, T. and Hitchcock, A.P., Phys. Rev. B 45, 13591 (1992).Google Scholar
12. Dharma-wardana, M.W.C., Aers, G.C., Lockwood, D.J. and Baribeau, J.-M., Phys. Rev. B 41, 5319 (1990).Google Scholar
13. Dharma-wardana, M.W.C., Lockwood, D.J., Aers, G.C. and Baribeau, J.-M., J. Phys.: Condensed Matter 1, 2445 (1989).Google Scholar
14. Glembocki, O.J. and Prokes, S.M., SPIE Proceedings 1678, 147 (1992).CrossRefGoogle Scholar