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Interface Effect on the Transverse Thermal Conductivity of SiO2 Films Deposited on Silicon

Published online by Cambridge University Press:  10 February 2011

W. Zhao ,
F. R. Brotzen ,
L. Hehn  and
P. J. Loos
W. Zhao
Affiliation:
Rice University, Dept. of Mech. Engi. and Mat. Sci., Houston, TX 77005
F. R. Brotzen
Affiliation:
Rice University, Dept. of Mech. Engi. and Mat. Sci., Houston, TX 77005
L. Hehn
Affiliation:
University of Houston, Dept. of Electrical Engineering, Houston, TX
P. J. Loos
Affiliation:
Texas Instruments Inc., Stafford, TX
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Abstract

Earlier work revealed that the transverse thermal conductivity of thin films of amorphous SiO2 deposited on monocrystalline silicon decreased substantially when the film thickness was less than about 1 µm. When multiple interfaces were created by the intercalation of thin intermediate layers of polycrystalline silicon into the SiO2 film, the thickness effect was enhanced. This observation pointed to an interfacial effect. A model accounting for the interface effect is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 51
Copyright
Copyright © Materials Research Society 1998

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