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Interdiffusion in MBE-Grown Symmetrically and Asymmetrically Strained Si/Si1−xGex Superlattices Investigated by Ion Scattering

  • B. Holländer (a1), R. Butz (a1) and S. Mantl (a1)

Abstract

The interdiffusion in MBE-grown Si/Si1−xGex superlattices was measured by Rutherford backscattering spectrometry. The superlattices consisted of 5 periods of 100 !A Si and 100 !A Si1−xGex layers with Ge concentrations, x, between 0.20 and 0.70. Both, asymmetrically strained superlattices, grown on Si(100), as well as symmetrically strained superlattices, grown on relaxed Si1−y.Gey buffer layers were investigated. Rapid thermal annealing in the temperature range between 900°C and 1125°C leads to significant interdiffusion between the individual layers, indicated by a decrease of the amplitudes of the backscattering spectra. Interdiffusion coefficients were deduced using a Fourier algorithm. The interdiffusion coefficients follow an Arrhenius law for a given Ge concentration. The interdiffusivity increases significantly with increasing Ge concentration.

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Interdiffusion in MBE-Grown Symmetrically and Asymmetrically Strained Si/Si1−xGex Superlattices Investigated by Ion Scattering

  • B. Holländer (a1), R. Butz (a1) and S. Mantl (a1)

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