Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-26T03:48:27.823Z Has data issue: false hasContentIssue false
  • English
  • Français

The Intercorrelation Between Microstructure and Chemicalmechanical Polish of Metal Thin Films

Published online by Cambridge University Press:  10 February 2011

Wei-Tsu Tseng  and
Ying-Lang Wang
Wei-Tsu Tseng
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, 1 Ta-Hsueh Road, Tainan 701 TAIWAN, wttsen@mail.ncku.edu.tw
Ying-Lang Wang
Affiliation:
Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan
Get access

Abstract

The correlation between microstructures of Al and W metal thin films and their respective CMP performance is investigated. It is found that CMP removal rate decreases with increasing grain size. In both cases, the textures of the metal films are altered and their resistivity increased after CMP. The phenomenon is more pronounced for polish under a greater down force. The table speed, on the other hand, has only minimum effects on microstructure and resistivity. The possible underlying mechanisms leading to this phenomenon are proposed and their potential impacts on metallization reliability is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 459
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dubin, V. M., Ting, C. H., Cheung, R., Lee, R., and Chen, S., in Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, edited by Cheung, R., Klein, J., Tsubouchi, K., Murakami, M., and Kobayashi, N. (MRS Conf. Proc., Pittsburgh, PA 1998), p. 405–411.Google Scholar
2. Ueno, K., Tsuchiya, T., Itoh, N., Kikkawa, T., and Sekiguchi, A., in Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, edited by Cheung, R., Klein, J., Tsubouchi, K., Murakami, M., and Kobayashi, N. (MRS Conf. Proc., Pittsburgh, PA 1998), p. 489–494.Google Scholar
3. Lingk, C. and Gross, M. E., J. Appl. Phys. 84, p. 5547 (1998).Google Scholar
4. Wang, Y.-L., Wu, J., Liu, C.-W., Wang, T.-C., and Dun, J., Thin Solid Films 332, p. 397 (1998).10.1016/S0040-6090(98)01200-0Google Scholar
5. Christian, J. W., The Theory of Transformation in Metals, Pergamon, New York, 1965, Chapters 20–23.Google Scholar
6. Zhang, F. and Busnaina, A., Electrochem. & Solid-State Lett. 1, p. 184 (1998).10.1149/1.1390679Google Scholar
7. Wang, Y.-L., Liu, C., Feng, M.-S., Dun, J., Chou, K.-S., Thin Solid Films 308–309, p. 543 (1997).Google Scholar
8. Tseng, W.-T., Chin, J.-H., Kang, L.-C., J. Electrochem. Soc., to appear in the May issue (1999).Google Scholar
9. Tseng, W.-T., Liu, C.-W., Dai, B.-T., Yeh, C.-F., Thin Solid Films 290–291, p. 458 (1996).10.1016/S0040-6090(96)09020-7Google Scholar