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Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

Published online by Cambridge University Press:  15 February 2011

Scott K. Stanley  and
John G. Ekerdt
Scott K. Stanley
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin Austin, Texas USA
John G. Ekerdt
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin Austin, Texas USA
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Abstract

Ge is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 879: Symposium Z – Chemistry of Nanomaterial Synthesis and Processing , 2005 , Z3.23
Copyright
Copyright © Materials Research Society 2005

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