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Interaction of Al Films on Single Crystal Si Substrates Induced by Ion Irradiation and Post-Anneal

Published online by Cambridge University Press:  22 February 2011

L. S. Hung ,
S. H. Chen  and
J. W. Mayer
L. S. Hung
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
S. H. Chen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
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Abstract

Rutherford backscattering and channeling techniques, transmission electron microscopy and Auger electron spectroscopy have been combined to investigate the reordering of implanted amorphous Si in the presence of an Al surface layer and the interdiffusion between these two elements. Recrystallization took place at 200°C and proceeded as the temperature increased. At 350–400°C, better epitaxial layers were obtained and channeling effects became observable. Substantial concentration of residual damage was observed in the regrown layer and persisted to high annealing temperatures. The concentration of Si in the Al film was far beyond the solid solubility at annealing temperatures. When ion implantation was performed at 200°C, the implanted layer was virtually defect free and the diffusion of Si into Al was suppressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 253
Copyright
Copyright © Materials Research Society 1984

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References

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