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Interaction between abrasive particles and film surfaces in low down force Cu CMP

  • Yuchun Wang (a1), Isaac Zomora (a1), Joe Hawkins (a1), Renjie Zhou (a1), Fred Sun (a1), Roy Martinez (a1), Jian Zhang (a1), Bin Lu (a1) and Shumin Wang (a1)...


A robust copper slurry should have high removal rate, efficient planarization, optimal over polishing window and fast clearing without corrosion. These requirements were addressed in the choice of abrasive particles, film formation for copper passivation, selectivity of copper to barrier, and interactions between particles and film surfaces. The performance results of low dishing erosion and surface finish are discussed with the proposed mechanism.



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1. Kim, H., Kwon, P., Lee, S., Kim, H.H., Lee, S.I., Song, S.Y., and Nam, C.W., “Control of pattern specific corrosion during aluminum chemical mechanical polishing”, in Chemical Mechanical Polishing 2001-Advances and Future Challenges, edited by Babu, S. V., Cadien, K.C., Yaho, H., Mater. Res. Soc. Proc. Vol 671, M6.6.1.


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