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Integration Of BPDA-PDA Polyimide With Two Levels Of Al(Cu) Interconnects

Published online by Cambridge University Press:  15 February 2011

J. T. Wetzel ,
Y. T. Lii ,
S. M. Filipiak ,
B.-Y. Nguyen ,
E. O. Travis ,
R. W. Fiordalice ,
M. E. Winkler ,
C. C. Lee  and
J. Peschke
J. T. Wetzel
Affiliation:
Materials Research and Strategic Technologies, Sector Technology Group, Motorola, 3501 Ed Bluestein Blvd, Austin, TX 78721
Y. T. Lii
Affiliation:
Advanced Products Research and Development Laboratory, Sector Technology Group, Motorola, 3501 Ed Bluestein Blvd, Austin, TX 78721
S. M. Filipiak
Affiliation:
Advanced Products Research and Development Laboratory, Sector Technology Group, Motorola, 3501 Ed Bluestein Blvd, Austin, TX 78721
B.-Y. Nguyen
Affiliation:
Advanced Products Research and Development Laboratory, Sector Technology Group, Motorola, 3501 Ed Bluestein Blvd, Austin, TX 78721
E. O. Travis
Affiliation:
Advanced Products Research and Development Laboratory, Sector Technology Group, Motorola, 3501 Ed Bluestein Blvd, Austin, TX 78721
R. W. Fiordalice
Affiliation:
Advanced Products Research and Development Laboratory, Sector Technology Group, Motorola, 3501 Ed Bluestein Blvd, Austin, TX 78721
M. E. Winkler
Affiliation:
Advanced Products Research and Development Laboratory, Sector Technology Group, Motorola, 3501 Ed Bluestein Blvd, Austin, TX 78721
C. C. Lee
Affiliation:
Advanced Products Research and Development Laboratory, Sector Technology Group, Motorola, 3501 Ed Bluestein Blvd, Austin, TX 78721
J. Peschke
Affiliation:
FSRAM Division, Microprocessor and Memories Technology Group, Motorola, 3501 Ed Bluestein Blvd, Austin, TX 78721
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Abstract

As device geometries continue to scale down, a larger portion of the circuit delay is contributed by interconnects, and the majority of this delay is due to capacitive loading. The replacement of plasma-deposited SiO2 as an intermetal dielectric with an insulator of lower dielectric constant can provide performance improvement through the reduction of capacitance.

A commercially available polyimide, BiPhenylene DiAnhydride – Phenylene DiAmine, BPDA-PDA, with an out-of-plane dielectric constant 3.0, is evaluated by integration with AI(Cu) in a double level metal, BiCMOS 4MB SRAM device, with 0.5μm groundrules. Process challenges unique to integration of an organic rather than inorganic insulator are described and experimental features concerning process integration, particularly via etch, Al(Cu) deposition, adhesion and moisture management are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 381: Symposium F – Low-Dielectric Constant Materials--Synthesis and Applications in Micro. , 1995 , 217
Copyright
Copyright © Materials Research Society 1995

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