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Integrated Two-Stage Processing of Microcrystalline Silicon Thin Films on SiO2 and Glass

Published online by Cambridge University Press:  10 February 2011

D. Wolfe ,
F. Wang  and
G. Lucovsky
D. Wolfe
Affiliation:
Departments of Materials Science and Engineering, Physics and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
F. Wang
Affiliation:
Departments of Materials Science and Engineering, Physics and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Departments of Materials Science and Engineering, Physics and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

A novel two-stage low temperature plasma assisted deposition process, which separates interface formation from bulk film growth, was investigated for deposition of in-situ phosphorous doped microcrystalline silicon (μc-Si) thin films on SiO2 and glass substrates. We find that the bulk layer microstructure, as characterized by reflection high energy electron diffraction and Raman scattering spectroscopy, is the same whether or not a buffer layer is used. However, we find significant differences in the room temperature dark conductivity, and the dark conductivity activation energies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 361
Copyright
Copyright © Materials Research Society 1996

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References

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