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Integrated Rapid Thermal CVD Processing Solutions for 0.18–0.25μm Technologies

  • H. Gilboa (a1), Y. E. Gilboa (a1), Z. Atzmon (a1), S. Levy (a1), H. Spilberg (a1), E. Bransky (a1), Z. Doitel (a1), R.P.S. Thakur (a2), R. A. Weimer (a2), S. Deboer (a2) and J. Pan (a2)...

Abstract

The evolution of integrated single-wafer processing for high-temperature applications in the front end of the line (FEOL) occurred with the advancements in single-wafer rapid thermal processing and its acceptance as a manufacturing technology. The Integra RTCVD cluster tool for high-temperature applications features wafer cleaning, rapid thermal processing and single wafer chemical vapor deposition steps. The paper presents integrated vapor phase clean and RTCVD applications for FLASH memory gate stack and DRAM cell.

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1.In- Situ Vapor Phase Pre- Gate Oxide Cleaning and Rapid Thermal Oxide Growth in a Cluster ToolGreen, M.L., Ma, Y. et. al. Mat. Res. Soc. proc. Spring Meeting p. 141 (1995)
2.In- Situ Vapor Phase Pre-Gate Oxide Cleaning and it's Effect on Metal-Oxide Semicinductor Device CharacterizationMa, Y., Green, M. L., et al. J. Vac. Sci. Technol. B 13(4), p. 1460 (1995).
3.A Comparison of In-Situ Vapor Gas Phase Cleaning to Conventional Based Wet CleaningGrant, J. M., Mat. Res. Soc. Symp. Proc. vol. 342, p. 313 (1994).
4.Rapid Thermal Oxidation of Silicon in Mixture of Oxygen and Nitrous Oxide”. Grant, M., Mat. Res. Soc. Symp. Proc. Vol 429 p. 257 (1996)
5.Front End of the Line (FEOL) Cluster Technologies There is Enough Room for RTPSt, R.P.S. et al 4th Int Conf on dvanced Thermal Processing of Semiconductor RTP 96 (1996)

Integrated Rapid Thermal CVD Processing Solutions for 0.18–0.25μm Technologies

  • H. Gilboa (a1), Y. E. Gilboa (a1), Z. Atzmon (a1), S. Levy (a1), H. Spilberg (a1), E. Bransky (a1), Z. Doitel (a1), R.P.S. Thakur (a2), R. A. Weimer (a2), S. Deboer (a2) and J. Pan (a2)...

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