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Integrated Heterostructure Devices (IHDS): A New Approach for the Fabrication of High-Efficiency Blue/Green Light Emitters Based on II-VI Materials

  • Y. Lansari (a1), Z. Yu (a1), J. Ren (a1), C. Boney (a1), J. W. Cook (a1) and J. F. Schetzina (a1)...

Abstract

Integrated heterostructure devices (IHDs) comprised of II-VI materials in multi-layered structures for light emitting diode (LED) and laser diode (LD) applications are described. These IHDs combine a light emission multilayer structure (wide band gap II-VI layers) with an abrupt or graded heterostructure (comprised of narrow band gap II-VI layers) for improved ohmic contact to the upper p-type layer of the light emitting structure.

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Integrated Heterostructure Devices (IHDS): A New Approach for the Fabrication of High-Efficiency Blue/Green Light Emitters Based on II-VI Materials

  • Y. Lansari (a1), Z. Yu (a1), J. Ren (a1), C. Boney (a1), J. W. Cook (a1) and J. F. Schetzina (a1)...

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