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Instability of Nanocavities in Disordered and Amorphous Silicon Under Ion Irradiation

  • X. Zhu (a1), J.S. Williams (a1) and J.C. McCallum (a2)

Abstract

It has recently been shown that a band of nanocavities in crystalline silicon is eliminated during amorphization of the silicon surrounding this band [4]. In this study, we examine the effect of irradiation dose on nanocavity stability. Gettering of Au is used as a detector for open volume defects following annealing of irradiated samples. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy have been used to analyse the samples. Cavities are only completely removed when the region surrounding the cavities is totally amorphized up to the surface. Partial amorphization leaves residual open volume defects.

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