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In-Situ Transmission Electron Microscopy for Analysis of Ion-Beam-Growth Processes

Published online by Cambridge University Press:  21 February 2011

Vladimir V. Pankov ,
Nikolai E. Levchuk  and
Anatoly P. Dostanko
Vladimir V. Pankov
Affiliation:
Belarusian State University of informatics and Radioelectronics, Modern Electronics Technologies Department, Minsk 220027, Belarus
Nikolai E. Levchuk
Affiliation:
Belarusian State University of informatics and Radioelectronics, Modern Electronics Technologies Department, Minsk 220027, Belarus
Anatoly P. Dostanko
Affiliation:
Belarusian State University of informatics and Radioelectronics, Modern Electronics Technologies Department, Minsk 220027, Belarus
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Abstract

Two types of systems for in situ transmission electron microscopy analysis of ion-beam etching, ion-beam sputtering and ion-beam assisted deposition are reported. their design, operational features and some applications are presented. Radiation-stimulated diffusion in Mo-Si heterostructure, early growth of ion-beam sputtered in-Sn, in-Sn-O, ZnS:Mn films and recrystallization of ln-Sn-O films during vacuum post-annealing are studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 405
Copyright
Copyright © Materials Research Society 1995

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References

1 Rualt, M.O., Chaumont, J., Bernas, H. IEEE Trans. Nuclear Sci. NS-30 (2) 1746 (1983).Google Scholar
2 Taylor, A., Ryan, E.A., Nucl. INstr. & Meth. IN Phys. Res. B10/11, Pt. 2, 687 (1985).Google Scholar
3 W.A.Isser, , Crystal Research and Technology 14 (11) 1393 (1979).Google Scholar
4 Poppa, H., Phil. Mag. 7 (78) 1013 (1962).Google Scholar
5 И.БєHдиKOB, O.Л.Taльянcĸaя, B.Φ.Pыбa∏KO, ∏pибopы и TєXHиKa ɜĸcπepимeнτA 5, 203 (1986).Google Scholar
6 Gonchod, J.-P., Ged, P., Bois, D., France Patent No 2477769, H 01 J,K.Google Scholar
7 K.Heinemann, , H.Poppa, , J. Vac. Sci Tehnol.. 10 (1) 22 (1973).Google Scholar
8 Morita, E., Takayanagi, K., Kobayashi, K., Yagi, K., Honjo, G., Jap. J. appl. Phys. 19 (10) 1981 (1980).Google Scholar
9 D.M.Sherman, , Th.EHutchinson, , Rev. Sci. INstrum. 43 (12) 1793 (1972).Google Scholar
10 G.ELane, , J.C.Anderson, , Thin Solid Films 26, 5 (1975).Google Scholar
11 Э.И.TOчицKий, KDиcτaллизaция и τepмooбpaбoτĸa TOHKиX πлeHOK (Hayka и TєXHиKa, MиHCK, 1976).Google Scholar
12 K.-H.Muller, , Surf. Sci. Lett. 184, L375 (1987).Google Scholar