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In-Situ Tem Observation of Interfacial Reactions in the Zr/Si System

Published online by Cambridge University Press:  25 February 2011

Htroyuki Tanaka ,
Toyohiko J. Konno  and
Robert Sinclair
Htroyuki Tanaka
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
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Abstract

The interfacial reactions in the Zr/Si system were studied by in-situ cross-section TEM including high resolution mode. The reactions consisted of formation of an amorphous interlayer followed by the nucleation and growth of crystalline ZrSi2- The development of the amorphous layer was found to involve two different stages. The ZrSi2 was also found to grow layer-by-layer into the Si via a ledge mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 481
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Cheng, J.Y. and Chen, L.J., J. Appl. Phys. 68, 4002 (1990).CrossRefGoogle Scholar
2 Sinclair, R. and Konno, T.J., J. Mag. Magn. Mater. 126, 108 (1993).CrossRefGoogle Scholar
3 Yamauchi, T., Zaima, S., Mizuno, M., Kitamura, H., Koide, Y., and Yasuda, Y., J. Appl. Phys. 69, 7050 (1991).Google Scholar
4 Bravman, J.C. and Sinclair, R., J. Electron Microsc. Technique 1, 53 (1984).Google Scholar