Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-27T18:02:50.707Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Synthesis and Magnetically Stabilized Kyropoulos Growth of Undoped Indium Phosphide

Published online by Cambridge University Press:  25 February 2011

Stephen Bachowski ,
Brian S. Ahern ,
Robert M. Hilton  and
Joseph A. Adamski
Stephen Bachowski
Affiliation:
Rome Air Development Center, Hansom AFB, MA 01731
Brian S. Ahern
Affiliation:
Rome Air Development Center, Hansom AFB, MA 01731
Robert M. Hilton
Affiliation:
Rome Air Development Center, Hansom AFB, MA 01731
Joseph A. Adamski
Affiliation:
Parke Mathematical Laboratories, Carlisle, MA 01741
Get access

Abstract

The Kyropoulos growth technique has been combined with in-situ synthesis to yield high purity undoped crystals of 300 to 700 gm charges of InP. Etched wafers show a uniform dislocation density across 70mm diameter in contrast with the "W" pattern created by LEC. Use of an axial magnetic field in Kyropoulos growth reduces the dislocation density by an order of magnitude, to 1 × 104cm-2. By combining Kyropoulos growth with in-situ synthesis of the indium phosphide, high mobility (4.6×104 at 77 C) undoped single crystals have been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 1007
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Bachman, K.J. and Buchler, E., J. Electrochem Soc, 121 (1974) 835.Google Scholar
2 Bonner, W.A., Crystal Growth, J., 54 (1981) 21.Google Scholar
3 Wardill, J.E. Dowling, d.J. Lovett, S.F., Crouch, D.A.E. and Thonpson, A.J., in: Proc. 1980 NATO Sponsored InP Workshop, 1980, p 65.Google Scholar
4 Farges, J.P., J. of Crystal Growth, 59 (1982) pp. 665–668.Google Scholar
5 CrystaComm, Inc, Final Technical Report N00014-82-C-2372 to Naval Research Laboratory, “Development of High Purity InP Crystals”, September 1983.Google Scholar
6 Clemans, J. E., Gault, W. A. and Monberg, E. M., AT&T Technical Journal, 65, Jul 1986, pp. 86–97.Google Scholar
7 Duseaux, Marc, J.of Crystal Growth, 61, (1983) pp. 576–590.Google Scholar
8 Jacob, G., J.of Crystal Growth, 58, (1982) pp. 455–459.Google Scholar
9 Glazov, V.M., Chizhevskaya, S.N., and Evgen’ev, S.B., Russian Journal of Physical Chemistry, 43, (2) 1969 p. 201–205.Google Scholar
10 Adamski, J., J. of Crystal Growth, 64, 1983 pp. 1–9.Google Scholar
11 Brown, G.T., Cockayne, B. and MacEwan, W. R. The Institute of Physics Conference Series No. 60; Section 7, April 1981.Google Scholar