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In-Situ Studies of the MBE Growth of CoSi2 on Si (111) in a UHV Transmission Electron Microscope

Published online by Cambridge University Press:  25 February 2011

J. M. Gibson ,
J. L. Batstone  and
R. T. Tung
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

In-situ observations of the growth of CoSi2 films by Co deposition in an ultrahigh vacuum transmission electron microscope are described. Results include the observation of intermediate epitaxial phases (both hexagonally distorted Co2Si and CoSi) and the observation that pinholes nucleate in CoSi2 films after growth in a metastable layer mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 151
Copyright
Copyright © Materials Research Society 1987

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References

1. Takayanagi, K., Tanashiro, Y., Takahashi, M. and Takahashi, S., J. Vac. Sci. Technol. A 3,1502 (1985)Google Scholar
2. Petroff, P.M. and Wilson, R.J., Phys. Rev. Lett. 51, 199 (1983)Google Scholar
3. McDonald, M.L., Gibson, J.M. and Unterwald, F.C., submitted to J. Sci. Inst.Google Scholar
4. Hensel, J.C., Tung, R.T., Poate, J.M. and Unterwald, F.C., Phys. Rev. Lett. 54, 1840 (1985)CrossRefGoogle Scholar
5. Bean, J.C. and Poate, J.M., Appl. Phys. Lett. 37, 643 (1980)Google Scholar
6. Tung, R.T., Bean, J.C., Gibson, J.M., Poate, J.M. and Jacobson, D.C., Appl. Phys. Lett. 40, 684 (1982)Google Scholar
7. Hensel, J.C., Levi, A.F.J., Tung, R.T. and Gibson, J.M., Appl. Phys. Lett. 47, 151 (1985)Google Scholar
8. Rosencher, E., Delage, S., Campidelli, Y. and D'Avitaya, F. Arnaud, Electron Lett. 20, 762 (1984)CrossRefGoogle Scholar
9. Tung, R.T., Levi, A.F.J. and Gibson, J.M., Appl. Phys. Lett. 48, 635 (1986)CrossRefGoogle Scholar
10. Hunt, B.D., Lewis, N., Hall, E.L., Turner, L.G., Schowlater, L.J., Okamoto, M. and Hashimoto, S., Mat. Res. Soc. Proc. 56, 151 (1986)Google Scholar
11. Pirri, C., Peruchetti, J.C., Gewinner, G. and Derrien, J., Phys. Rev. B 29 3391 (1984)Google Scholar
12. D'Avitaya, F. Arnaud, Delage, S., Rosencher, E. and Derrien, J., J. Vac. Sci.and Technol. B 2,770(1985)CrossRefGoogle Scholar
13. Boscherini, F., Joyce, J.J., Ruckman, M.W. and Weaver, J.H., Phys. Rev. B 35, 4216 (1987)CrossRefGoogle Scholar
14. D'Heurle, F.M. and Petersson, C.S., Thin Sol. Films 128, 283 (1985)CrossRefGoogle Scholar
15. Foll, H., Ho, P.S. and Tu, K.N., Phil. Mag. A 45, 31 (1982)Google Scholar
16. Gibson, J.M., Bean, J.C., Poate, J.M. and Tung, R.T., Thin Sol. Films 93, 99 (1982)Google Scholar