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In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

  • M. Cerullo (a1), Julia M. Phillips (a1), M. Anzlowar (a1), L. Pfeiffer (a1), J. L. Batstone (a1) and M. Galiano (a2)...

Abstract

A new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

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[18] Anzlowar, M. (to be published).
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