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In-Situ Pretreatment Approach for Surface Deterioration Alleviation Amidst Thermal Desorption of Si(100)

Published online by Cambridge University Press:  01 February 2011

A.F. Pun ,
X. Wang ,
J.B. Meeks ,
S.M Durbin  and
J.P. Zheng
A.F. Pun
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
X. Wang
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
J.B. Meeks
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
S.M Durbin
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, NEW ZEALAND
J.P. Zheng
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
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Abstract

Within this article, a novel in-situ method is proposed as a modification of thermal desorption utilizing pretreatment which can be applied to systems subject to material deposition, substrate heating, and creation of non-oxidizing environments (vacuum or inert atmosphere). Following the theoretical development of this proposed method, involving the fue ling of the oxide-reduction reaction with segregated sacrificial material, the method is demonstrated experimentally on Si (100) wafers utilizing ex-situ atomic force microscopy for resulting surface topography analysis and in-situreflective high-energy electron diffraction for crystalline information during the modified thermal desorption progression.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J2.3
Copyright
Copyright © Materials Research Society 2005

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References

1 Garner, C.M., Lindau, I., Su, C.Y., Pianetta, P., and Spicer, W.E., Physical Review B19(8), 3944 (1979).Google Scholar
2 Schaefer, J.A., and Göpel, W., Surface Science 155, 535 (1985).Google Scholar
3 Mayusumi, M., Imai, M., Nakahara, S., Inoue, K., and Habuka, H., Japanese Journal of Applied Physics 40(11), 6556 (2001).Google Scholar
4 D'evelyn, M.P., Nelson, M.M., and Engel, T., Surface Science 186, 75 (1987).Google Scholar
5 Schell-Sorokin, A.J., and Demuth, J.E., Surface Science 157, 273 (1985).Google Scholar
6 Miki, E., Sakamoto, K., Sakamoto, T., Surface Science 406, 312 (1998).Google Scholar
7 Wei, Y., Wallace, R.M., and Seabaugh, A.C., Applied Physics Letters 69(9), 1270 (1996)Google Scholar
8 Castaldini, A., Cavalcoli, D., Cavallini, A., Jones, D., Palermo, V., and Susi, E., Journal of the Electrochemical Society 149(12), G633 (2002).Google Scholar
9 Palmero, V., and Jones, D., Materials Science and Engineering B88, 220 (2002).Google Scholar
10 Kobayashi, Y., Sugii, K., Journal of the Vacuum Society and Technology A10(3), 2308 (1992).Google Scholar
11 Hofmann, K., Rubloff, G.W., and McCorkle, R.A., Applied Physics Letters 49(22), 1525 (1986).Google Scholar
12 Hofmann, K., Young, D.R., and Rubloff, G.W., Journal of Applied Physics 62(3), 925 (1987).Google Scholar
13 Liehr, M., Lewis, J.E., and Rubloff, G.W., Journal of Vacuum Science and Technology. A 5, 1559 (1987).Google Scholar
14 Rubloff, G. W., Journal of Vacuum Science and Technology A8, 1857 (1990).Google Scholar
15 Streit, D.C., and Allen, F.G., J. Appl. Phys. 61, 2894 (1987).Google Scholar
16 Tabe, M., Japn. J. Appl. Phys. 21, 534 (1982).Google Scholar
17 Yonehara, T., Yoshioka, S., and Miyazawa, S., J. Appl. Phys. 53, 6839 (1982).Google Scholar