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In-situ Observation of Formation Processes of Anodic Porous Alumina on a Si Substrate Using Infrared Absorption Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Yasuo Kimura ,
Hirokazu Shiraki ,
Hisao Ishii ,
Sachiko Ono ,
Kingo Itaya  and
Michio Niwano
Yasuo Kimura
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980–8577, JapanPhone: +81–22–217–5502 E-mail: ykimura@riec.tohoku.ac.jp CREST, Japan Science and Technology Corporation, Aoba-yama 04, Sendai, 980–8579, Japan
Hirokazu Shiraki
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980–8577, JapanPhone: +81–22–217–5502 E-mail: ykimura@riec.tohoku.ac.jp
Hisao Ishii
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980–8577, JapanPhone: +81–22–217–5502 E-mail: ykimura@riec.tohoku.ac.jp CREST, Japan Science and Technology Corporation, Aoba-yama 04, Sendai, 980–8579, Japan
Sachiko Ono
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 1–24–2 Nishi Shinjuku, Shinjuku-ku, Tokyo 163–8677, Japan
Kingo Itaya
Affiliation:
CREST, Japan Science and Technology Corporation, Aoba-yama 04, Sendai, 980–8579, Japan Depeartment of Applied Chemistry, Graduate School of Engineering, Tohoku University, Aoba-yama 04, Sendai, 980–8579, Japan
Michio Niwano
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980–8577, JapanPhone: +81–22–217–5502 E-mail: ykimura@riec.tohoku.ac.jp CREST, Japan Science and Technology Corporation, Aoba-yama 04, Sendai, 980–8579, Japan
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Abstract

We investigated formation processes of a porous anodic alumina film on a p-type silicon (Si) substrate using infrared absorption spectroscopy in the multiple internal reflection geometry (MIR-IRAS). We observed drastic IR spectral changes when porous anodic alumina film approached interfaces between an aluminum (Al) layer and a Si substrate. The intensity of the IR absorption peaks due to water (H2O) molecules and silicon oxides (SiO2) increased simultaneously with a spike of anodic current density. The IR spectral changes indicated that the penetration of electrolytes brought about inhomogeneous oxidation of a Si substrate surface. We observed that the arrangement of the SiO2 nanodots closely reflected that of pores of a porous anodic alumina film. IR absorption peaks due to porous anodic alumina finally disappeared. The formation of SiO2 nanodots on a Si substrate promoted penetration of electrolytes to peel the porous anodic alumina film off it.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 788: Symposium L – Continuous Nanophase and Nanostructured Materials , 2003 , L8.6
Copyright
Copyright © Materials Research Society 2004

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References

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