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In-situ monitoring of nucleation stage during aluminum-CVD for nano-structure control

Published online by Cambridge University Press:  17 March 2011

T. Iino ,
M. Sugiyama  and
Y. Shimogaki
T. Iino
Affiliation:
Department of Materials Engineering, University of Tokyo
M. Sugiyama
Affiliation:
Department of Chemical System Engineering, University of Tokyo7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan TEL&FAX:+81-3-5841-7131 E-mail: iino@dpe.mm.t.u-tokyo.ac.jp
Y. Shimogaki
Affiliation:
Department of Materials Engineering, University of Tokyo
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Abstract

Initial nucleation of Al in chemical vapor deposition (CVD) using dimethyl-aluminum- hydride was observed in order to obtain a principle for enhancing the nucleation density. The analysis employed in situ surface reflectivity measurement combined with X-ray photoelectron spectroscopy and scanning electron microscopy at the typical stage of reflectivity behavior. During the incubation period between the injection of DMAH and the nucleation of Al, a constant amount of Al existed on the surface while no nuclei was observed. The precursor of the nuclei seemed not DMAH itself but the reaction product of the adsorbed DMAH. The activation energy for reciprocal of the incubation period, which may be an index of the reaction rate of the adsorbed layer, is slightly larger than for the continuous growth of Al.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 697: Symposium P – Surface Engineering 2001--Fundamentals and Applications , January 2001 , P5.2
Copyright
Copyright © Materials Research Society 2002

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References

[1] Avinun, M., Barel, N., Kaplan, W. D., Eizenberg, M., Naik, M., Guo, T., Chen, L.Y., Mosely, R., Lttau, K., Zhou, S., Chen, L., Thin Solid Films, 320, 67 (1998).Google Scholar
[2] Iino, T., Sugiyama, M., Itoh, H., Aoyama, J., Komiyama, H. and Shimogaki, Y., Proc. Advanced Metallization Conference 2000, edited by Edelstein, D., Dixit, G., Yasuda, Y. and Ohba, T., (Material Research Society, Pennsylvania, U.S.A.) pp.679–683.Google Scholar
[3] Sugai, K., Okabayashi, H., Kobayashi, A., Yako, T. and Kshida, S., Jpn J Appl. Phys., 34, L429 (1995). A. Husmann, G. Weidner, M. Weidner, G. Ritter, Thin Solid Films, 318, 124 (1998).Google Scholar
[5] Sugiyama, M., Nakajima, T., Tanaka, T., Itoh, H., Aoyama, J., Egashira, Y., Yamashita, K., Komiyama, H. and Shimogaki, Y., Jpn. J. Appl. Phys., 39, 6501 (2000). T. W. Jang, W. Moon, J. T. Baek, B. T. Ahn, Thin Solid Films, 333, 137 (1998).Google Scholar