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In-Situ Monitoring by Mass Spectrometry for GaAs Etched with An Electron Cyclotron Resonance Source

Published online by Cambridge University Press:  22 February 2011

D. J. Kahaian  and
S. W. Pang
D. J. Kahaian
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122
S. W. Pang
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122
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Abstract

Quadrupole mass spectrometry (QMS) has been used as an in-situ diagnostic technique for GaAs etched with an electron cyclotron resonance source. Changes in the detected signal intensities for reactive species and etch products have been related to corresponding changes in the etch rate as several process parameters were varied. The detected 75As+ and to a lesser degree, 35C1+ and 70C12+, were observed to follow etch rate as microwave power, rf power, source to sample distance, temperature, and pressure were varied. The self-induced dc bias (IVdcl) determines the etch rate dependence on etch time. The time delay before saturation of the monitored 75As+ signal corresponding to a constant etch rate is inversely proportional to IVdcl. The addition of N2/O2 in a 4:1 ratio to constitute 15% of the total discharge resulted in a 95% decrease in the intensity of the monitored 75As+ signal. The measured etch rate decreased by 75%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 329
Copyright
Copyright © Materials Research Society 1994

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References

1. Burton, R. H., Hollien, C. L., Marchut, L., Abys, S. M., Smolinsky, G., Gottscho, R.A., J. Appl. Phys. 54, 6663 (1983).Google Scholar
2. Seaward, K. L., Moll, N. J., and Coulman, D. J., J. Appl. Phys. 61, 2358 (1987).Google Scholar
3. Webb, A. P., Semicond. Sci. Technol. 2, 463 (1987).Google Scholar
4. Hayes, T. R., Dreisbach, M. A., Thomas, P.M., Dautremont-Smith, W. C., and Helmbrook, L. A., J. Vac. Sci. Technol. B 7, 1130 (1989).CrossRefGoogle Scholar
5. Webb, A. P., Appl. Surf. Sci. 63, 70 (1993).CrossRefGoogle Scholar
6. Hopwood, J., Reinhard, D. K., and Asumussen, J., J. Vac. Sci. Technol. B 9, 3521 (1991).Google Scholar
7. Pang, S. W. and Ko, K.K., J. Vac. Sci. Technol. B 10, 2703 (1992).Google Scholar
8. Pearton, S. J. and Hobson, W. S., Semicond. Sci. Technol. 6, 948 (1987).Google Scholar
9. Pang, S. W., Sung, K. T., and Ko, K. K., J. Vac. Sci. Technol. B 10, 1118 (1992).CrossRefGoogle Scholar