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In-situ emissivity and temperature measurement during rapid thermal processing (RTP)

Published online by Cambridge University Press:  25 February 2011

P. Vandenabeele ,
R. J. Schreutelkamp ,
K. Maex ,
C. Vermeiren  and
W. Coppye
P. Vandenabeele
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
R. J. Schreutelkamp
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Vermeiren
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
W. Coppye
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

A prototype RTP system has been developed which allows for in-situ emissivity and temperature measurements. The wafer emissivity is measured by using an optical detector at a wavelength of 2.4 μm and by modulation of the lamp power. This method permits accurate temperature determination in the range from 400 to 1200°C, independent of wafer backside roughness, backside layers, and transmit tance. The feasibility of the temperature measurement technique is demonstrated by using wafers with built-in thermocouples and highly As-doped wafers with different backside roughnesses or layers. The emissivity variations during processing can also be used to study thin film reactions in-situ. This is demonstrated for Co silicidation using probing wavelengths varying from 0.6 to 3.2 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 653
Copyright
Copyright © Materials Research Society 1992

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References

[1] Schreutelkamp, R. J., Vandenabeele, P., Deweerdt, B., Coppye, W., Vermeiren, C., Lauwers, A., and Maex, K., these proceedings.Google Scholar
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