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In-Situ Ellipsometry Study of Pulsed Laser Deposited ZnO Films

Published online by Cambridge University Press:  25 February 2011

Shakil Pittal ,
L.A. Mcconville ,
N.J. Tanno  and
P.G. Snyder
Shakil Pittal
Affiliation:
Department of Electrical Engineering, and Center for Microelectronic and Optical Materials Research, University of Nebraska, Lincoln, NE 68588-0511
L.A. Mcconville
Affiliation:
Department of Electrical Engineering, and Center for Microelectronic and Optical Materials Research, University of Nebraska, Lincoln, NE 68588-0511
N.J. Tanno
Affiliation:
Department of Electrical Engineering, and Center for Microelectronic and Optical Materials Research, University of Nebraska, Lincoln, NE 68588-0511
P.G. Snyder
Affiliation:
Department of Electrical Engineering, and Center for Microelectronic and Optical Materials Research, University of Nebraska, Lincoln, NE 68588-0511
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Abstract

Ellipsometry is normally used to characterize layered structures that have uniform properties laterally across the area of the probe beam. In this study, pulsed laser deposition of ZnO films was found to have highly nonuniform growth properties in the lateral directions. We were able to account for the effects of the nonuniform growth on in-situ ellipsometric data, by considering two dynamic growth models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 423
Copyright
Copyright © Materials Research Society 1992

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References

1. Shiosaki, T., Ohnishi, S., and Wawabata, A., J. Appl. Phys. 50, 3113 (1979).Google Scholar
2. Takagi, T., Matsubara, W., and Yamada, K., J. Cryst. Growth 45, 318 (1978).CrossRefGoogle Scholar
3. Yamamota, T., Shiosaki, T., and Kawabata, A., J. Appl. Phys. 51, 3113 (1980).CrossRefGoogle Scholar
4. Ohji, K., Yamazaki, O., Wasa, K., and Hayakawa, S., J. Vac. Sci. and Technol. 14 1601 (1978).CrossRefGoogle Scholar
5. Yamazaki, O., Mitsuyu, T., and Wasa, K., IEEE Trans. SU–27, 369 (1980).Google Scholar
6. Choi, B. H. and Im, H.B., J. Am. Ceram. Soc. 73, 1347 (1990).Google Scholar
7. Manabe, Y. and Mitsuyu, T., Jap. J. Appl. Phys. 22, 334 (1990).CrossRefGoogle Scholar
8. Woollam, J.A. Co., Lincoln, NEGoogle Scholar
9. Azzam, R.M.A. and Bashara, N.M., Ellipsometry and Polarized Light, North-Holland, Amsterdam (1977).Google Scholar
10. Erington, K.B., Masters Thesis, University of Nebraska (1990).Google Scholar
11. Memarzadeh, K. and Woollam, J.A., Proc. SPIE 823 54 (1987).CrossRefGoogle Scholar