Skip to main content Accessibility help
×
Home

Ink-Jet Printed Cu/CuxO/Ag ReRAM Memory Devices Fabricated on Flexible Substrate

  • Simin Zou (a1) and Michael C. Hamilton (a1)

Abstract

Recently, flexible electronics is attracting growing attention due to its various properties such as lightness and flexibility, which cannot be replaced by rigid electronics. In this study, we investigate flexible ink-jet printed Cu/CuxO/Ag capacitor-like structure that exhibits bipolar resistive switching behavior under direct current voltage sweeps. A vaccum-free and low temperature process is used to fabricate this ReRAM memory device, which allows straightforward fabrication and a structure for characterization of the possible use of CuxO as an insulating layer in these devices. Our device displays a resistive switching ratio greater than 30 between the high resistance and low resistance state at room temperature. The devices exhibit metallic behavior in the low resistance state and a semiconductor behavior is found in the initial and high resistance states as observed in temperature dependent resistance measurements. The resistive switching mechanism of the fabricated structures is explained by the formation and rupture of conductive filament paths.

Copyright

Corresponding author

*Corresponding Author E-mail: mch0021@auburn.edu, Tel: 334-844-1879

References

Hide All
1. Shin, S., Kim, K. and Kang, S., Trans. Nanotechnol, 10, 266 (2011).
2. Kim, K. H., Gaba, S., Wheeler, D., Cruz-Albrecht, J. M., Hussain, T., Srinivasa, N. and Lu, W., Nano lett., 12, 389 (2011).
3. Gergel-Hackett, N., Hamadani, B., Dunlap, B., Suehle, J., Richter, C., Hacker, C. and Gundlach, D., IEEE Electron Device Lett. 30, 706 (2009).
4. Chen, Y. S., et al. ., in IEEE International Electron Devices Meeting (IEDM), pp.14 (2009).
5. Verbakel, F., Meskers, S. C., Janssen, R. A., Gomes, H. L., Colle, M., Buchel, M. and de Leeuw, D. M., Appl. Phy. Lett. 91, 192103 (2007).
6. Szot, K., Speier, W., Bihlmayer, G. and Waser, R., Nat. Mater. 5, pp. 312320 (2006).
7. Guan, W., Liu, M., Long, S., Liu, Q. and Wang, W., Appl. Phys. Lett. 93, 223506 (2008).
8. Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y. and Tokura, Y., Appl. Phys. Lett. 86, 012107 (2005).
9. Williams, R., Spectr, IEEE 45, 12, pp. 2835 (2008).
10. Liu, Q., Guan, W., Long, S., Jia, R., Liu, M. and Chen, J., Appl. Phys. Lett. 92, 012117 (2008).
11. Zou, S., Xu, P., Hamilton, M. C., Electron. Lett. 49, 13 (2013).
12. Zou, S., Hamilton, M. C., in IEEE Electronic Components and Technology Conference (ECTC), pp. 441446 (2014) .
13. Parretta, A., Jayaraj, M. K., Di Nocera, A., Loreti, S., Quercia, L. and Agati, A., Phys. status solidi (a), 155, 399 (1996).
14. Lin, K. L., Hou, T. H., Shieh, J., Lin, J. H., Chou, C. T. and Lee, Y. J., J. Appl Phys, 109, 084104 (2011).
15. Lee, C. B., Kang, B. S., et al. . Appl. Phys. Lett., 93(4), 042115 (2008).

Keywords

Related content

Powered by UNSILO

Ink-Jet Printed Cu/CuxO/Ag ReRAM Memory Devices Fabricated on Flexible Substrate

  • Simin Zou (a1) and Michael C. Hamilton (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.