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Initial Stage of Titanium Slicide Formation on Si(Lll) Substrate

Published online by Cambridge University Press:  15 February 2011

S. Shingubara ,
S. Takata ,
E. Takahashi ,
S. Konagata ,
H. Sakaue  and
T. Takahagi
S. Shingubara
Affiliation:
Department of Electrical Engineering, Hiroshima University, Kagamiyama 1–4–1, Higashi-hiroshima, JAPAN 739, shingu@ue.ipc.hiroshima-u.ac.jp
S. Takata
Affiliation:
Department of Electrical Engineering, Hiroshima University, Kagamiyama 1–4–1, Higashi-hiroshima, JAPAN 739, shingu@ue.ipc.hiroshima-u.ac.jp
E. Takahashi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Kagamiyama 1–4–1, Higashi-hiroshima, JAPAN 739, shingu@ue.ipc.hiroshima-u.ac.jp
S. Konagata
Affiliation:
Department of Electrical Engineering, Hiroshima University, Kagamiyama 1–4–1, Higashi-hiroshima, JAPAN 739, shingu@ue.ipc.hiroshima-u.ac.jp
H. Sakaue
Affiliation:
Department of Electrical Engineering, Hiroshima University, Kagamiyama 1–4–1, Higashi-hiroshima, JAPAN 739, shingu@ue.ipc.hiroshima-u.ac.jp
T. Takahagi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Kagamiyama 1–4–1, Higashi-hiroshima, JAPAN 739, shingu@ue.ipc.hiroshima-u.ac.jp
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Abstract

Detailed analysis of Ti and/or TiSi2 islands growth have been made by UHV-STM observations after Ti deposition and subsequent annealing. It is shown that islands growth mode changes drastically at about 500 U for both cases on Si(111)-7×7 and on H-terminated Si(lll)-l×l. In the temperature regime higher than 500 °C, activation energies of islands growth are 1.12eV and 0.56eV for Si(M11)-7×7 and H-terminated Si(111) respectively. It is speculated that residual H-atoms combined with Si dangling bonds lowered surface diffusion activation energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 137
Copyright
Copyright © Materials Research Society 1996

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References

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