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Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Silicon Surfaces

Published online by Cambridge University Press:  21 February 2011

T. Hattori ,
H. Nohira ,
K. Ohishi ,
Y. Shimizu  and
Y. Tamura
T. Hattori
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
H. Nohira
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
K. Ohishi
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
Y. Shimizu
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
Y. Tamura
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
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Abstract

The initial stages of SiO2/Si interface formation on hydrogen-terminated n-type and p-type Si(111) surfaces, which are obtained by the treatment in 40% NH4F solution, were investigated in details at 300°C in dry oxygen with a pressure of 1 Torr up to nearly two molecular layers of silicon oxide. It was found that the oxidation proceeds more uniformly on p-type Si than on n-type Si. However, even on p-type Si the oxidation does not proceed uniformly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 387
Copyright
Copyright © Materials Research Society 1993

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References

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