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Initial Stage of Heteroepitaxial Growth of Compound Semiconductor on Si Substrate

Published online by Cambridge University Press:  25 February 2011

T. Soga ,
T. George ,
T. Suzuki ,
T. Jimbo  and
M. Umeno
T. Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. George
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109
T. Suzuki
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

The initial stage of epitaxial growth of GaP on Si by low pressure metalorganic chemical vapor deposition was studied. The surface changes from heavily islanded morphology to more planar morphology with increasing V/III flux ratio. GaP on Si grown at low V/III flux ratio contains a high concentration of defects, however, a significant reduction in the density of these defects is observed in GaP grown using a high V/III flux ratio. The antiphase domains generated at the GaP/Si interface are annihilated during the growth. The critical V/III ratio where the growth changes from island-type growth to planar-type growth reduces with increasing growth pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 155
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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