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Initial Stage of Cvd Copper Deposition on Teos Oxide
Published online by Cambridge University Press: 15 February 2011
Abstract
Selective deposition of copper on metal (such as TiN) versus dielectric (such as oxide) requires understanding of the mechanism of chemical-vapor-deposition copper deposition. This work studies the initial stage of CVD copper deposition with hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (Cu-hfac-tmvs) precursor on tetraethylorthosilicate (TEOS) oxide using Fourier transform infrared spectroscopy (FTIR).
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- Copyright © Materials Research Society 1996