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The Initial Growth Stages and Crystallization Mechanism of Bi-based films

Published online by Cambridge University Press:  01 February 2011

Oleg V. Kononenko ,
Alexandra V. Andreeva  and
Alexandr I. Il'in
Oleg V. Kononenko
Affiliation:
Institute of Microelectronics Technology and High Purity Materials, RAS, 143432 Chernogolovka, Moscow Region, Russia.
Alexandra V. Andreeva
Affiliation:
Institute of Microelectronics Technology and High Purity Materials, RAS, 143432 Chernogolovka, Moscow Region, Russia.
Alexandr I. Il'in
Affiliation:
Institute of Microelectronics Technology and High Purity Materials, RAS, 143432 Chernogolovka, Moscow Region, Russia.
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Abstract

The present work deals with investigation of the initial stages of growth of (Bi, Bi-Sb) films deposited by the methods of different degrees of nonequilibrium, such as thermal evaporation (TE) and self-ion assisted deposition (SIAD). The comparative analysis of growth mechanisms and film island evolution (faceting and coalescence) was carried out depending on the type (crystalline, amorphous) and temperature of substrate, evaporation rate, film composition, etc. Ion bombardment during deposition leads to films of higher density and reduced porosity, and greater stability than those deposited without bombardment. As compared with the pure Bi films the facetted island morphology of the SIAD Bi–Sb (20%) films is not so clear. This is explained by partial realization of the coalescence process by the liquid fluidity mechanism. At all substrate temperatures the grain orientation (111) R is more pronounced for SIAD films than for the TE films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 721: Symposia E/J – Texture and Microstructure in Electronic and Magnetic Films – Nanostructural Magnetic Materials for Data Storage , 2002 , J4.2
Copyright
Copyright © Materials Research Society 2002

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